Method of fabricating transistor device

A method for making a transistor device includes embossing to separate parts of a layer of electrically-conducting material, thereby separating a source and a drain. The gap between the source and the drain is filled with a semiconductor material, and the source and drain are operatively coupled to a gate to make a transistor. The electrically-conducting material and the semiconductor material may be deposited using printing processes, and the various steps in the method of making the device may be performed in one or more row-to-row operations.

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Z. Huang, J. Grunlan, P. Chang, Method of fabricating transistor device, U.S. Patent 2004/0075155 A1 (filed October 17, 2002).

Published in U.S. Patent 2004/0075155 A1 / Thin Films